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| 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features * Capable of low voltage operation (VDS = 1.5 to 3 V) * Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) * High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline 3SK309 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 -4 -4 18 100 125 -55 to +125 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Gate 1 to cutoff current Gate 2 to cutoff current Symbol I G1SS I G2SS Min -- -- -0.2 -0.2 25 30 18 -- -- -- Typ -- -- -- -- 40 40 21 1.25 20 1.3 Max -20 -20 -1.5 -1.5 60 -- -- 1.5 -- -- Unit A A V V mA mS dB dB dB dB Test conditions VG1S = -4 V VG2S = VDS = 0 VG2S = -4 V VG1S = VDS = 0 VDS = 3 V, VG2S = 0 I D = 100 A VDS = 3 V, VG1S = 0 I D = 100 A VDS = 3 V, VG1S = 0 VG2S = 0 VDS = 3 V, VG2S = 0 I D = 5 mA, f = 1 kHz VDS = 3 V, VG2S = 0 I D = 5 mA, f = 900 MHz VDS = 1.5 V, VG2S = 0 I D = 3 mA, f = 900 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Zero gate voltege drain current I DSS Forward transfer admittance Power gain Noise figure Power gain Noise figure Note: Marking is "XV-" |yfs| PG NF PG NF 2 3SK309 Main Characteristics 3 3SK309 4 3SK309 5 3SK309 6 3SK309 Sparameter (V DS = 3 V, VG2S = 0, ID = 5 mA, Zo = 50 ) Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 MAG 0.999 0.997 0.995 0.992 0.981 0.968 0.956 0.949 0.935 0.922 0.912 0.895 0.873 0.860 0.838 0.822 0.807 0.787 0.767 0.756 ANG -2.8 -5.9 -9.4 -12.3 -15.2 -18.9 -21.8 -24.5 -27.6 -30.7 -33.5 -36.2 -38.7 -41.4 -43.8 -45.6 -48.3 -50.7 -52.4 -55.0 S21 MAG 3.29 3.27 3.29 3.26 3.23 3.22 3.20 3.15 3.14 3.12 3.06 3.03 2.97 2.93 2.89 2.85 2.83 2.79 2.74 2.69 ANG 176.7 173.1 169.0 165.8 161.9 158.3 154.4 151.3 147.4 143.7 140.3 136.7 133.3 130.1 126.9 123.6 120.5 117.4 114.4 110.9 S12 MAG 0.00167 0.00302 0.00394 0.00506 0.00703 0.00797 0.00911 0.0104 0.0114 0.0123 0.0137 0.0139 0.0150 0.0161 0.0162 0.0171 0.0178 0.0185 0.0186 0.0190 ANG 95.2 89.0 80.5 83.7 80.8 78.1 76.9 77.1 73.2 72.1 71.9 70.8 68.5 68.5 67.2 66.6 67.2 66.0 64.3 63.7 S22 MAG 0.963 0.963 0.961 0.959 0.957 0.955 0.953 0.949 0.946 0.942 0.939 0.935 0.931 0.926 0.922 0.918 0.913 0.909 0.905 0.901 ANG -0.9 -2.2 -3.5 -5.0 -6.3 -8.0 -9.2 -10.6 -12.0 -13.5 -14.7 -16.0 -17.3 -18.6 -20.2 -21.5 -22.7 -23.8 -25.5 -26.6 7 3SK309 8 3SK309 Package Dimentions Unit: mm 9 3SK309 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 10 |
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